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RN2965(TE85L,F)

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RN2965(TE85L,F)

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max) :100mA
Product Status :Active
Transistor Type :2 PNP - Pre-Biased (Dual)
Frequency - Transition :200MHz
Mounting Type :Surface Mount
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series :-
Vce Saturation (Max) @ Ib, Ic :300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :50V
Supplier Device Package :US6
Resistor - Base (R1) :2.2kOhms
Mfr :Toshiba Semiconductor and Storage
Resistor - Emitter Base (R2) :47kOhms
Current - Collector Cutoff (Max) :100nA (ICBO)
Power - Max :200mW
Package / Case :6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce :80 @ 10mA, 5V
Base Product Number :RN2965
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Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
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