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Shenzhen Century Tongxin Electronics Co., Ltd

City:shenzhen

Country/Region:china

Contact Person:Mrxiao

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IMD6AT108

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased

Current - Collector (Ic) (Max) :100mA

Product Status :Active

Transistor Type :1 PNP Pre-Biased, 1 NPN

Frequency - Transition :250MHz

Mounting Type :Surface Mount

Package :Tape & Reel (TR)

Series :-

Vce Saturation (Max) @ Ib, Ic :300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :50V

Supplier Device Package :SMT6

Resistor - Base (R1) :4.7kOhms

Mfr :Rohm Semiconductor

Resistor - Emitter Base (R2) :-

Current - Collector Cutoff (Max) :500nA (ICBO)

Power - Max :300mW

Package / Case :SC-74, SOT-457

DC Current Gain (hFE) (Min) @ Ic, Vce :100 @ 1mA, 5V

Base Product Number :IMD6

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Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V 100mA 250MHz 300mW Surface Mount SMT6

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