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IXGH40N120C3D1

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Shenzhen Century Tongxin Electronics Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:Mrxiao
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  • China IXGH40N120C3D1 wholesale
  • China IXGH40N120C3D1 wholesale

IXGH40N120C3D1
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Gate-Emitter Leakage Current :100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :75 A
Pd - Power Dissipation :380 W
Collector- Emitter Voltage VCEO Max :1.2 kV
Package / Case :TO-247-3
Maximum Operating Temperature :+ 150 C
Packaging :Tube
Maximum Gate Emitter Voltage :+/- 20 V
Collector-Emitter Saturation Voltage :4.4 V
Manufacturer :IXYS
Description :IGBT Transistors 75Amps 1200V
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The IXGH40N120C3D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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