IRG7PH30K10PBF
Ask Latest Price
Video Channel
Gate-Emitter Leakage Current :100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :33 A
Pd - Power Dissipation :210 W
Collector- Emitter Voltage VCEO Max :1.2 kV
Package / Case :TO-247-3
Maximum Operating Temperature :+ 175 C
Maximum Gate Emitter Voltage :+/- 30 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :2.05 V
Manufacturer :IR / Infineon
Description :IGBT Transistors Trnch IGBT 1200V 10A single IGBT
more
View Product Description
The IRG7PH30K10PBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
