Shenzhen Century Tongxin Electronics Co., Ltd

People-oriented, professional services

Manufacturer from China
Active Member
2 Years
Home / Products / IGBT Transistors /

IRG7PH44K10DPBF

Product Categories
Contact Now
Shenzhen Century Tongxin Electronics Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:Mrxiao
Contact Now

IRG7PH44K10DPBF

Ask Latest Price
Video Channel
Gate-Emitter Leakage Current :100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :70 A
Pd - Power Dissipation :320 W
Collector- Emitter Voltage VCEO Max :1200 V
Package / Case :TO-247AC-3
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 30 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :2.4 V
Manufacturer :IR / Infineon
Description :IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description
The IRG7PH44K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Inquiry Cart 0