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DMN2400UFDQ-7

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Country/Region:china
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DMN2400UFDQ-7

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Transistor Polarity :N-Channel
Technology :Si
Id - Continuous Drain Current :900 mA
Mounting Style :SMD/SMT
Minimum Operating Temperature :- 55 C
Package / Case :U-DFN1212-3
Maximum Operating Temperature :+ 150 C
Channel Mode :Enhancement
Vds - Drain-Source Breakdown Voltage :20 V
Packaging :Reel
Vgs th - Gate-Source Threshold Voltage :450 mV
Product Category :MOSFET
Rds On - Drain-Source Resistance :350 mOhms
Number of Channels :1 Channel
Vgs - Gate-Source Voltage :12 V
Qg - Gate Charge :500 pC
Manufacturer :Diodes Incorporated
Description :MOSFET 20V N-Ch Enh FET VL Gate 1.0V
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The DMN2400UFDQ-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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